Fundamentals 8 min read

High‑Density Silicon Photonics 400G/100G Module Design for Data Center Networks

The article details the design of high‑density silicon‑photonic 400G/100G optical modules using 25.6T ASIC chips, compares integrated and separated packaging schemes, presents test results, and explains why silicon photonics is crucial for future high‑performance data‑center networking.

Architects' Tech Alliance
Architects' Tech Alliance
Architects' Tech Alliance
High‑Density Silicon Photonics 400G/100G Module Design for Data Center Networks

With the rapid expansion of cloud services, data‑center campuses have grown from 100k to 300k slots, creating a demand for higher‑density 100 G networking; the solution is to develop ASIC‑based switches that can support 128 × 100 G (12.8 T) or up to 256 × 100 G (25.6 T) configurations.

Using a 25.6 T chip, a 256 × 100 G chassis would occupy 8 RU and require nine high‑speed boards, making the back‑plane complex; instead, redesigning the chip as 64 × 400 G with a 1‑in‑4 fan‑out optical module achieves the same 256 × 100 G capacity in only 2–4 RU with a single board and no back‑plane, greatly reducing cost and complexity.

The silicon‑photonic DR4/DR1 approach leverages single‑mode fan‑out modules, which offer longer reach and fewer optical channels than multimode; silicon‑photonic (SiP) chips are chosen over EML for better yield, reliability, lower cost, and broader temperature tolerance.

Two module designs were evaluated: Scheme 1 integrates a 3‑D‑packaged silicon‑photonic engine with a state‑of‑the‑art 7 nm PAM4 DSP, while Scheme 2 uses a separated‑chip approach with a 16 nm PAM4 DSP and domestically sourced optical components.

Scheme 1’s 3‑D BGA integrates MZM, PD, driver, and TIA on a single chip, consuming less than 4 W; testing showed BER < 10⁻⁸ without FEC, eye‑diagram TDECQ < 0.6 dB, and total module power under 8.9 W, outperforming most 400 G multimode modules.

Scheme 2’s separated packaging employs golden‑wire interconnects, a 5.8 W 16 nm DSP, and domestic silicon‑photonic chips, achieving up to 200 Gbps per lane (≈800 G per module) with TEDCQ < 2 dB, suitable for both short‑ and long‑reach applications.

Both approaches have distinct strengths: the integrated scheme offers higher speed balance and compact density, while the separated scheme provides flexible chip combinations, higher yield, and easier scalability, positioning silicon‑photonic modules as a key technology for future high‑performance, stable data‑center networks.

In summary, silicon‑photonic technology based on stable silicon materials will significantly enhance the reliability and density of next‑generation high‑speed networks, making it a core component for future optical‑electrical co‑packaged solutions.

data centerASIChigh densityoptical modules400Gsilicon photonics
Architects' Tech Alliance
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Architects' Tech Alliance

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